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| SI8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 0.024 @ VGS = 4.5 V 20 0.026 @ VGS = 3.7 V 0.034 @ VGS = 2.5 V 0.040 @ VGS = 1.8 V Bump Side View IS1S2 (A) 7 6.8 5.0 5.5 D D D D TrenchFETr Power MOSFET Ultra-Low rSS(on) ESD Protected: 4000 V New MICRO FOOTt Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area APPLICATIONS D Battery Protection Circuit - 1-2 Cell Li+/LiP Battery Pack for Portable Devices S1 MICRO FOOTt Backside View S2 76 S2 Pin 1 Identifier S2 85 S2 G1 4 kW Device Marking: 8900E = P/N Code xxx = Date/Lot Traceability Code 4 kW G2 8900E xxx G2 9 4 G1 S1 10 3 S1 N-Channel S1 12 S1 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Source1--Source2 Voltage Gate-Source Voltage Continuous Source1--Source2 Current (TJ = 150_C)a _ Pulsed Source1--Source2 Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range Package Reflow Conditionsc VPR IR/Convection TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VS1S2 VGS IS1S2 ISM 5 secs 20 Steady State "12 Unit V 7 5.1 10 1.8 5.4 3.9 1 0.5 -55 to 150 215 220 _C C W A PD TJ, Tstg 0.9 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Footb t v 5 sec Steady State Steady State RthJA RthJF Symbol Typical 55 95 12 Maximum 70 120 15 Unit _C/W C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. b. The Foot is defined as the top surface of the package. c. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering. Document Number: 71830 S-21474--Rev. D, 26-Aug-02 www.vishay.com 1 SI8900EDB Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) IGSS VSS = VGS, ID = 1.1 mA VSS = 0 V, VGS = "4.5 V Gate-Body Leakage VSS = 0 V, VGS = "12 V VSS = 16 V, VGS = 0 V Zero Gate Voltage Source Current On-State Source Currenta IS1S2 IS(on) VSS = 16 V, VGS = 0 V, TJ = 85_C VSS = 5 V, VGS = 4.5 V VGS = 4.5 V, ISS = 1 A VGS = 3.7 V, ISS = 1 A Source1--Source2 On-State Resistancea rS1S2(on) VGS = 2.5 V, ISS = 1 A VGS = 1.8 V, ISS = 1 A Forward Transconductancea gfs VSS = 10 V, ISS = 1 A 5 0.020 0.022 0.026 0.032 31 0.024 0.026 0.034 0.040 S W 0.45 1.0 "4 "10 1 5 V mA mA mA m A Symbol Test Condition Min Typ Max Unit Dynamicb Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VSS = 10 V, RL = 10 W ISS ^ 1 A, VGEN = 4.5 V, RG = 6 W 3 4.5 55 15 5 7 85 25 ms m Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 20 IGSS @ 25_C (mA) I GSS - Gate Current (mA) 16 I GSS - Gate Current (mA) 10,000 Gate Current vs. Gate-Source Voltage 1,000 100 TJ = 150_C 10 12 8 1 TJ = 25_C 0.1 4 0 0 3 6 9 12 15 0.01 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71830 S-21474--Rev. D, 26-Aug-02 SI8900EDB New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 5 thru 1.5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 10 Vishay Siliconix Transfer Characteristics 6 6 4 1V 4 TC = 125_C 2 25_C -55 _C 2 0 0 1 2 3 4 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V IS1S2 = 1 A r DS(on) - On-Resistance ( W ) VGS = 1.8 V 0.03 VGS = 2.5 V VGS = 3.7 V 0.02 VGS = 4.5 V r DS(on) - On-Resistance (W) (Normalized) 10 0.04 1.4 1.2 1.0 0.01 0.8 0.00 0 2 4 6 8 0.6 -50 -25 0 25 50 75 100 125 150 ID - Drain Current (A) TJ - Junction Temperature (_C) On-Resistance vs. Gate-to-Source Voltage 0.10 0.2 Threshold Voltage r DS(on) - On-Resistance ( W ) 0.08 V GS(th) Variance (V) IS1S2 = 5 A 0.06 IS1S2 = 1 A 0.04 0.1 IS1S2 = 1.1 mA -0.0 -0.1 -0.2 0.02 -0.3 0.00 0 1 2 3 4 5 -0.4 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) Document Number: 71830 S-21474--Rev. D, 26-Aug-02 TJ - Temperature (_C) www.vishay.com 3 SI8900EDB Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power, Junction-to-Ambient 30 25 20 Power (W) 15 10 5 0 0.01 0.1 1 Time (sec) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 95_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 www.vishay.com 4 Document Number: 71830 S-21474--Rev. D, 26-Aug-02 SI8900EDB New Product PACKAGE OUTLINE MICRO FOOT: 10-BUMP (2 X 5, 0.8-mm PITCH) 10 O 0.30 X 0.31 Note 3 Solder Mask O X 0.40 Vishay Siliconix A e A2 A1 Silicon Bump Note 2 e Recommended Land b Diamerter S2 8900E xxx Mark on Backside of Die E e S1 e D NOTES (Unless Otherwise Specified): 1. 2. 3. Laser mark on the silicon die back, coated with a thin metal. Bumps are Eutectic solder 63/57 Sn/Pb. Non-solder mask defined copper landing pad. MILLIMETERS* Dim A A1 A2 b D E e S1 S2 Min 0.600 0.260 0.340 0.370 4.050 1.980 0.750 0.430 0.580 INCHES Min 0.0236 0.102 0.0134 0.0146 0.1594 0.0780 0.0295 0.0169 0.0228 Max 0.650 0.290 0.360 0.410 4.060 2.000 0.850 0.450 0.600 Max 0.0256 0.0114 0.0142 0.0161 0.1598 0.0787 0.0335 0.0177 0.0236 * Use millimeters as the primary measurement. Document Number: 71830 S-21474--Rev. D, 26-Aug-02 www.vishay.com 5 |
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